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2SC1162

器件描述:Silicon NPN Epitaxial
器件厂商:HITACHI [Hitachi Semiconductor]
文件大小:29.63KB,共5页
Sponsor by e络盟
器件资料摘要:
2SC1162
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SA715
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
35 V
Collector to emitter voltage V
CEO
35 V
Emitter to base voltage V
EBO
5V
Collector current I
C
2.5 A
Collector peak current I
C(peak)
3A
Collector power dissipation P
C
0.75 W
P
C
*
1
10 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.