GENERAL DESCRIPTION
Silicon NPN high frequency, high power transistors in
a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V
-
300 V
V
CEO
Collector-emitter voltage (open base)
-
250 V
I
C
Collector current (DC)
-
1 A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation T
mb
25
-
40 W
V
CEsat
Collector-emitter saturation voltage I
C
= 0.5A; I
B
= 0.1A
-
1.2 V
V
F
Diode forward voltage I
F
= 0.5A 1.5 2.0 V
t
f
Fall time - s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 300 V
V
CEO
Collector-emitter voltage (open base) - 250 V
V
EBO
Emitter-base oltage (open colloctor) 5 V
I
C
Collector current (DC) - 1 A
I
B
Base current (DC) - 0.2 A
P
tot
Total power dissipation Tmb 25 - 40 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
I
CBO
Collector-base cut-off current V
CB
=300V - 0.2 mA
I
EBO
Emitter-base cut-off current V
EB
=5V - 0.2 mA
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=1mA 250
V
CEsat
Collector-emitter saturation voltages I
C
= 0.5A; I
B
=0.1A - 1.2 V
h
FE
DC current gain I
C
= 0.3A; V
CE
= 5V 30 200
f
T
Transition frequency at f = 5MHz I
C
= 0.1A; V
CE
= 12V 5 - MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V 50 - pF
t
on
On times us
t
s
Tum-off storage time us
t
f
Fall time us
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com