GENERAL DESCRIPTION
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V
-
160 V
V
CEO
Collector-emitter voltage (open base)
-
140 V
I
C
Collector current (DC)
-
12 A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation T
mb
25
-
100 W
V
CEsat
Collector-emitter saturation voltage I
C
= 4.0A; I
B
= 0.4A
-
3 V
V
F
Diode forward voltage I
F
= 4.0A 1.5 2.0 V
t
f
Fall time I
C
=4.0A,I
B1
=-I
B2
=0.4A,V
CC
=60V 0.35 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 160 V
V
CEO
Collector-emitter voltage (open base) - 140 V
V
EBO
Emitter-base oltage (open colloctor) 6 V
I
C
Collector current (DC) - 12 A
I
B
Base current (DC) - 3 A
P
tot
Total power dissipation Tmb 25 - 100 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
I
CBO
Collector-base cut-off current V
CB
=160V - 0.2 mA
I
EBO
Emitter-base cut-off current V
EB
=5V - 0.2 mA
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=1mA 140 V
V
CEsat
Collector-emitter saturation voltages I
C
= 4.0A; I
B
= 0.4A - 2 V
h
FE
DC current gain I
C
= 1A; V
CE
= 5V 50 200
f
T
Transition frequency at f = 5MHz I
C
= 1A; V
CE
= 12V 5 - MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V,f=1MHZ 210 - pF
t
on
On times I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=60V us
t
s
Tum-off storage time I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=60V us
t
f
Fall time I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=60V 0.35 1.0 us
ELECTRICAL CHARACTERISTICS
MT-100
Wing Shing Computer Components Co., (H.K .)L td. Tel: (852)234 1 92 76 Fax : (852)279 7 8153
Homepage: http: / / www.wingshing.com E-mail: wsccltd@hk star.com