1
Power Transistors
2SB947, 2SB947A
Silicon PNP epitaxial planar type
For low-voltage switching
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
l High-speed switching
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–40
–50
–20
–40
–5
–15
–10
35
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SB947
2SB947A
2SB947
2SB947A
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= –40V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –2A
I
C
= –7A, I
B
= – 0.23A
I
C
= –7A, I
B
= – 0.23A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
I
C
= –2A, I
B1
= –66mA, I
B2
= 66mA
min
–20
–40
45
90
typ
150
200
0.1
0.5
0.1
max
–50
–50
–50
260
– 0.6
–1.5
Unit
m A
m A
V
V
V
MHz
pF
m s
m s
m s
2SB947
2SB947A
2SB947
2SB947A
*
h
FE2
Rank classification
Rank Q P
h
FE2
90 to 180 130 to 260