2SB857
器件描述：PNP EPITAXIAL PLANAR TRANSISTOR
器件厂商：HSMC [Hi-Sincerity Mocroelectronics]
文件大小：34.71KB，共3页
Sponsor by e络盟器件资料摘要：
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857 HSMC Product Specification
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -70 - - V IC=-10uA, IE=0
BVCEO -50 - - V IC=-50mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-50V, IC=0
*VCE(sat) - - -1 V IC=-2A, IB=-0.2A
*VBE(on) - - -1 V IC=-1A, VCE=-4V
*hFE1 35 - - IC=-0.1A, VCE=-4V
*hFE2 60 - 320 IC=-1A, VCE=-4V
fT - 15 - MHz VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank B C D
hFE 60-120 100-200 160-320
MICROELECTRONICS CORP.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
HSB857 HSMC Product Specification
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -70 - - V IC=-10uA, IE=0
BVCEO -50 - - V IC=-50mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-50V, IC=0
*VCE(sat) - - -1 V IC=-2A, IB=-0.2A
*VBE(on) - - -1 V IC=-1A, VCE=-4V
*hFE1 35 - - IC=-0.1A, VCE=-4V
*hFE2 60 - 320 IC=-1A, VCE=-4V
fT - 15 - MHz VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank B C D
hFE 60-120 100-200 160-320