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2SB857

器件描述:Silicon PNP Triple Diffused
器件厂商:HITACHI [Hitachi Semiconductor]
文件大小:32.67KB,共5页
Sponsor by e络盟
器件资料摘要:
2SB857, 2SB858
Silicon PNP Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SB857 2SB858 Unit
Collector to base voltage V
CBO
–70 –70 V
Collector to emitter voltage V
CEO
–50 –60 V
Emitter to base voltage V
EBO
–5 –5 V
Collector current I
C
–4 –4 A
Collector peak current I
C(peak)
–8 –8 A
Collector power dissipation P
C
*
1
40 40 W
Junction temperature Tj 150 150 C
Storage temperature Tstg –45 to +150 –45 to +150 C
Note: 1. Value at T
C
= 25 C