1
Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
n
Features
l High collector to emitter voltage V
CEO
.
l Large collector power dissipation P
C
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–50
–40
–5
–3
–1.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
E
= 0
I
C
= –2mA, I
B
= 0
V
CE
= –5V, I
C
= –1A
*2
I
C
= –1.5A, I
B
= –0.15A
*2
I
C
= –2A, I
B
= –0.2A
*2
V
CB
= –5V, I
E
= 0.5A, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–50
–40
80
typ
150
45
max
–1
–100
–10
220
–1
–1.5
Unit
m A
m A
m A
V
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank Q R
h
FE
80 ~ 160 120 ~ 220
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion