1
Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD958
n
Features
l High collector to emitter voltage V
CEO
.
l Low noise voltage NV.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–120
–120
–7
–50
–20
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
NV
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –20mA, I
B
= –2mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= 40V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100kW , Function = FLAT
min
–120
–120
–7
180
typ
150
max
–100
–1
700
– 0.6
150
Unit
nA
m A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700