UTC 2SB772S PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772S is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882S TO-92
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25 °C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V CBO -40 V
Collector-Emitter Voltage V CEO -30 V
Emitter-Base Voltage V EBO -5 V
Collector Dissipation( Tc=25 °C) Pc 10 W
Collector Dissipation( Ta=25 °C) Pc 1 W
Collector Current(DC) Ic -3 A
Collector Current(PULSE) Ic -7 A
Base Current I B -0.6 A
Junction Temperature T j 150 °C
Storage Temperature T STG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25 °C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current I CBO V CB =-30V,I E =0 -1000 nA
Emitter Cut-Off Current I EBO V EB =-3V,Ic=0 -1000 nA
DC Current Gain(note 1) h FE1
h FE2
V CE =-2V,Ic=-20mA
V CE =-2V,Ic=-1A
30
100
200
150 400
Collector-Emitter Saturation Voltage V CE (sat) Ic=-2A,I B =-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage V BE (sat) Ic=-2A,I B =-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product f T V CE =-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob V CB =-10V,I E =0,f=1MHz 45 pF
Note 1:Pulse test :PW<300 µs,Duty Cycle<2%
CLASSIFICATION OF hFE
RANK Q P E
RANGE 100-200 160-320 200-400