2SB772
器件描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR
文件大小:46.98KB,共2页
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器件资料摘要:
UTC 2SB772 PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-002,A
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772 is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30
Emitter-Base Voltage VEBO -5 V
Collector Dissipation( Tc=25°C) Pc 10 W
Collector Dissipation( Ta=25°C) Pc 1 W
Collector Current(DC) Ic -3 A
Collector Current(PULSE) Ic -7 A
Base Current IB -0.6
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=-30V,IE=0 -1000 nA
Emitter Cut-Off Current IEBO EB=-3V,Ic=0 -1000 nA
DC Current Gain(note 1) hFE1
hFE2
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
30
100
200
150
400
Collector-Emitter Saturation Voltage VCE(sat) Ic=-2A,IB=-0.2A -0.3 -0.5 V
Base-Emitter Saturation Voltage VBE(sat) Ic=-2A,IB=-0.2A -1.0 -2.0 V
Current Gain Bandwidth Product fT VCE=-5V,Ic=-0.1A 80 MHz
Output Capacitance Cob VCB=-10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%