2SB633
器件描述:PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)
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器件资料摘要:
2SB633 PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER
TO-220
! Complement to 2SD613
ABSOLUTE MAXIMUM RATINGS (T
A
=25℃)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25℃)
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
-100
-85
-5
-6
40
150
-50~150
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
A
=25℃)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
ICBO
IEBO
hFE1
VCE(sat)
fT
VCB= -100V , IE=0
VEB=- 5V , IC=0
VCE= -5V , IC=-1A
IC=-4A , IB=-0.4A
VCE= -2V , IC=-0.5A
40
8
-10
10
320
-2.0
µA
µA
V
MHZ
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com