SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Ordering number:346G
2SB631,631K/2SD600,600K
91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
retemaraPlobmySsnoitidnoC006D,136BS2K006D,K136BS2tinU
egatloVesaB-ot-rotcelloCV
OBC
001)–(021)–(V
egatloVrettimE-ot-rotcello
OEC
001)– 21)–
egatloVesaB-ot-rettimEV
OBE
5)–(V
tnerruCrotcelloCI
C
1)–(A
)esluP(tnerruCrotcello
PC
2)–(A
noitapissiDrotcelloCP
C
1W
8W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
( ) : 2SB631, 631K
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
Features
· High breakdown voltage V
CEO
100/120V, High
current 1A.
· Low saturation voltage, excellent h
FE
linearity.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
JEDEC : TO-126
Tc=25˚C
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB(
I
C
I,Aµ01)–(=
E
0= 006D,136B001)–(V
K006D,K136 21)–
egatloVnwodkarBrettimE-ot-rotcello
OEC)RB(
I
C
R,Am1)–(=
EB
=∞ 006D,136 01)–
K006D,K136B021)–(V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB(
I
E
I,Aµ01)–(=
C
0=5)–
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V05)–(=
E
0=1)–(Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V4)–(=
C
0 )–(Aµ