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1998©
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
2002
FEATURES
• Ideal for audio amplifier drivers with 30 W to 50 W output
High voltage
Available for small mount spaces due to small and thin package
Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol 2SB548/
2SD414
2SB549/
2SD415
Unit
Collector to base voltage VCBO −100/120 V
Collector to emitter voltage VCEO −80/80 −100/100 V
Emitter to base voltage VEBO −5.0/5.0 V
Collector current IC(DC) −0.8/0.8 A
Collector current IC(pulse)* −1.5/1.5 A
Total power dissipation PT (Ta = 25°C) 1.0 W
Total power dissipation PT (Tc = 25°C) 10 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current ICBO VCB = −80/80 V, IE = 0 −1.0/1.0 µA
Emitter cutoff current IEBO VEB = −3.0/3.0 V, IC = 0 −1.0/1.0 µA
DC current gain hFE1 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* 20
DC current gain hFE2 VCE = −5.0/5.0 V, IC = −200/200 mA* 40 90 320
Collector saturation voltage VCE(sat) IC = −500/500 mA, IB = −50/50 mA* −0.4/0.3 −2.0/2.0 V
Base saturation voltage VBE(sat) IC = −500/500 mA, IB = −50/50 mA* −0.9/0.9 −1.5/1.5 V
Gain bandwidth product fT VCE = −5.0/5.0 V, IC = −100/100 mA 70/45 MHz
Collector capacitance Cob VCB = −10/10 V, IE = 0, f = 1.0 MHz 25/15 pF
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking S R Q P
hFE2 40 to 80 60 to 120 100 to 200 160 to 320