Transistors
1
2SB1679
Silicon PNP epitaxial planer type
For low-frequency amplification
a73 Features
• Large current capacitance
• Low collector to emitter saturation voltage
• Small type package, allowing downsizing and thinning of the
equipment.
a73 Absolute Maximum Ratings T
a
= 25°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S-Mini Type Package (3-pin)
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−15 V
Collector to emitter voltage V
CEO
−10 V
Emitter to base voltage V
EBO
−7V
Peak collector current I
CP
− 0.5 A
Collector current I
C
−1A
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
2.1
±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
°
10°
Marking Symbol: 3V
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −10 V, I
E
= 0 −100 nA
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −15 V
Collector to emitter voltage V
CEO
I
C
= −1 mA, I
B
= 0 −10 V
Emitter to base voltage V
EBO
I
E
= −10 µA, I
C
= 0 −7V
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= −2 V, I
C
= − 0.5 A 130 350
h
FE2
V
CE
= −2 V, I
C
= −1 A 60
Collector to emitter saturation voltage
*
1
V
CE(sat)
I
C
= − 0.4 A, I
B
= −8 mA − 0.16 − 0.3 V
Base to emitter saturation voltage
*
1
V
BE(sat)
I
C
= − 0.4 A, I
B
= −8 mA − 0.8 −1.2 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 130 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 22 pF
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Rank R S
h
FE1
130 to 220 180 to 350
Note)
*
1: Pulse measurement
*
2: Rank classification