57
* hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Darlington 2SB1659
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1659
–110
–110
–5
–6
–1
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1659
–100max
–100max
–110min
5000min*
–2.5max
–3.0max
100typ
110typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=–110V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–5A
IC=–5A, IB=–5mA
IC=–5A, IB=–5mA
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
–30
RL
(Ω)
6
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
5
ton
(m s)
1.1typ
tstg
(m s)
3.2typ
tf
(m s)
1.1typ
IB1
(mA)
–5
VBB1
(V)
–10
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0
±0.2
4.8±0.2
1.4
2.0±0.1
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
E
C
(70Ω)
Equivalent circuit
Collector Current I
C
(A)
IC–VCE Characteristics (Typical)
0
0
–2
–4
–6
–2 –6–4
IB=–0.1mA
–5mA
–1mA
–0.5mA
–0.4mA –0.3mA
–0.2mA
0
–3
–2
–1
–0.1 –1–0.5 –10–5 –100–50
–5A
IC=–3A
0
–6
–4
–2
0–3–2–1
(VCE=–4V)
–0.02 –0.05 –0.1 –1–0.5 –6–5
(VCE=–4V)
500
200
10000
40000
1000
5000
Typ
(VCE=–4V)
–0.02 –0.1–0.05 –0.5 –6–5–1
100
5000
10000
500
1000
50000
25˚C
–30˚C
125˚C
0.02 0.10.05 0.5 1 5 6
60
40
0
20
100
120
80
(VCE=–12V)
Typ
50
40
30
20
10
2
0
0 25 50 75 100 125 150
0.4
1
5
0.5
1 10 100 1000 2000
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta DeratingSafe Operating Area (Single Pulse)
θ j-a–t Characteristics
fT–IE Characteristics (Typical)
125˚C (Case Temp)
25˚C (CaseT emp)
–30˚C (CaseT emp)
Collector Current IC(A) Collector Current IC(A) Time t(ms)
DC Current Gain h
FE
DC Current Gain h
FE
Transient Thermal Resistance
θ
j-a
(˚C/W)
Cut-off Frequency f
T
(MH
Z
)
Emitter Current IE(A) Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
Base Current IB(mA) Base-Emittor Voltage VBE(V)Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Collector Current I
C
(A)