Power Transistors
1
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
a73 Features
• Satisfactory forward current transfer ratio h
FE
characteristics
• Wide area of safe operation (ASO)
• Optimum for the output stage of a HiFi audio amplifier
a73 Absolute Maximum Ratings T
C
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−160 V
Collector to emitter voltage V
CEO
−160 V
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−15 A
Collector current I
C
−8A
Collector power
T
C
= 25°CP
C
100 W
dissipation
T
a
= 25°C3
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
C
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −160 V, I
E
= 0 −100 µA
I
CEO
V
CB
= −160 V, I
E
= 0 −100 µA
Emitter cutoff current I
EBO
V
EB
= −5 V, I
C
= 0 −100 µA
Collector to emitter voltage V
CEO
I
C
= −10 mA, I
B
= 0 −160 V
Forward current transfer ratio h
FE1
V
CE
= −5 V, I
C
= −1 A 500
h
FE2

*
V
CE
= −5 V, I
C
= −7 A 3 500 15 000
Collector to emitter saturation voltage V
CE(sat)
I
C
= −7 A, I
B
= −7 mA −3V
Base to emitter saturation voltage V
BE(sat)
I
C
= −7 A, I
B
= −7 mA −3V
Transition frequency f
T
V
CE
= −10 V, I
C
= − 0.5 A, f = 1 MHz 20 MHz
Turn-on time t
on
I
C
= 7 A, I
B1
= −7 mA, I
B2
= 7 mA 1.0 µs
Storage time t
stg
V
CC
= −50 V 1.5 µs
Fall time t
f
1.2 µs
Note)
*
: Rank classification
Rank P Q
h
FE2
5 000 to 15 000 3 500 to 10 000
15.5±0.5 3.0±0.3
(4.0)
2.0±0.2
1.1±0.1
5.45±0.3
0.7±0.1
5°
5°
5°
5°
5°
10.9±0.5
1
5°
23
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
±0.3
5.5
±0.3
(2.0)
26.5
±0.5
(23.4)
22.0
±0.5
18.6
±0.5
(2.0)
φ 3.2±0.1
(4.5)
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E