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1998©
Document No. D15410EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1669
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SB1669 is a power transistor that can be directly driven from
the output of an IC. This transistor is ideal for OA and FA equipment
such as motor and solenoid drivers.
FEATURES
• High DC current amplifier rate
hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A)
Z type available for surface mounting supported prodcuts
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −60 V
Collector to emitter voltage VCEO −60 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −3.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms,
duty cycle ≤ 50%
−6.0 A
Base current (DC) IB(DC) −1.0 A
(TC = 25°C) 25 WTotal power dissipation PT
(TA = 25°C) 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
ORDERING INFORMATION
Part No. Package
2SB1669 TO-220AB
2SB1669-S TO-262
2SB1669-Z TO-220SMD