1998©
Document No. D16148EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1628
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SB1628 features high current capacity in small dimension
and is ideal for DC/DC converters and mortor drivers.
FEATURES
• High current capacitance
Low collector saturation voltage
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO −20 V
Collector to emitter voltage VCEO −16 V
Emitter to base voltage VEBO −6.0 V
Collector current (DC) IC(DC) −3.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms
Duty cycle ≤ 50 %
−5.0 A
Base current (DC) IB(DC) −0.2 A
Base current (pulse) IB(pulse) PW ≤ 10 ms
Duty cycle ≤ 50 %
−0.4 A
Total power dissipation PT 16 cm
2
× 0.7 mm ceramic board used 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
Electrode connection
1: Emitter
2: Collector (fin)
3: Base