1
Power Transistors
2SB1653
Silicon PNP triple diffusion planar type
For power switching
n
Features
l High collector to emitter V
CEO
l Low collector to emitter saturation voltage V
CE(sat)
l Allowing automatic insertion with radial taping
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–400
–400
–7
–1
– 0.5
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
V
CB
= –400V, I
E
= 0
V
CE
= –100V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
V
CE
= –5V, I
C
= –50mA
V
CE
= –5V, I
C
= –300mA
I
C
= –100mA, I
B
= –10mA
V
CE
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 0.2A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
I
C
= –100mA,
I
B1
= –10mA, I
B2
= 10mA,
V
CC
= –150V, R
L
= 1.5kW
min
–400
80
10
typ
– 0.25
– 0.8
20
25
1.0
0.8
1.0
max
–1
–1
–1
280
– 0.5
–1.2
50
Unit
m A
m A
mA
V
V
V
MHz
pF
m s
m s
m s
*
h
FE1
Rank classification
Rank P Q
h
FE1
80 to 160 130 to 280
Unit: mm
1:Emitter
2:Collector
3:Base
MT3 Type Package
7.5– 0.2 4.5– 0.2
90°
0.8C0.8C
0.4– 0.1
0.8C
123
0.5– 0.1
0.7– 0.1
1.0– 0.1
0.85– 0.10.65– 0.1
0.7– 0.1
2.5
–
0.1
10.8
–
0.2
16.0
–
1.0
3.8
–
0.2
2.5– 0.22.5– 0.2 2.05– 0.2