52
Darlington 2SB1625
* hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–2 –6–4
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
IB=–0.1mA
–5mA
–1mA
–0.5mA
–0.4mA –0.3mA
–0.2mA
0
–3
–2
–1
–0.1 –1–0.5 –10–5 –100–50
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
–5A
IC=–3A
0
–6
–4
–1
–2
–3
–5
0–3–2–1
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.2 –0.05 –0.1 –1–0.5 –6–5
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–4V)
500
200
10,000
40,000
1,000
5,000
Typ
(VCE=–4V)
–0.02 –0.1–0.05 –0.5 –6–5–1
100
5000
10000
500
1000
50000
Collector Current IC(A)
DC Current Gain h
FE 25˚C
–30˚C
125˚C
0.5
5
1
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0.02 0.10.05 0.5 1 5 6
60
40
0
20
100
120
80
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–5 –10 –50 –100 –150
–0.1
–0.05
–1
–0.5
–10
–20
–5
10ms
DC
100ms
Without Heatsink
Natural Cooling
60
40
20
3.5
0
05025 75 125100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
Safe Operating Area (Single Pulse)
θ j-a–t Characteristics
fT–IE Characteristics (Typical)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1625
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1625
–100max
–100max
–110min
5000min*
–2.5max
–3.0max
–100typ
–110typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=–110V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–5A
IC=–5A, IB=–5mA
IC=–5A, IB=–5mA
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
–30
RL
(Ω)
6
IC
(A)
–5
VBB2
(V)
5
IB2
(mA)
5
ton
(m s)
1.1typ
tstg
(m s)
3.2typ
tf
(m s)
1.1typ
IB1
(mA)
–5
VBB1
(V)
–10
B
E
C
(70Ω)
Equivalent circuit
External Dimensions FM100(TO3P)
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2 5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2494)