1
Power Transistors
2SB1607
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD2469
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
l Satisfactory linearity of foward current transfer ratio h
FE
l Large collector current I
C
l Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9– 0.3
231
4.6– 0.2
2.9– 0.2
2.6– 0.1
2.54– 0.2
0.75– 0.1
1.2– 0.15
5.08– 0.4
15.0
–
0.3
13.7
+0.5 –0.2
f 3.2– 0.1
3.0
–
0.2
8.0
–
0.2
4.1
–
0.2
Solder Dip
1.45– 0.15 0.7– 0.1
7°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–130
–80
–7
–15
–7
40
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –100V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
I
C
= –5A, I
B
= – 0.25A
I
C
= –5A, I
B
= – 0.25A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –3A, I
B1
= – 0.3A, I
B2
= 0.3A
min
–80
45
90
typ
30
0.5
1.5
0.1
max
–10
–50
260
– 0.5
–1.5
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
*
h
FE2
Rank classification
Rank Q P
h
FE2
90 to 180 130 to 260