2SB1568
Transistors
Rev.A 1/3
Power Transistor (−80V, −4A)
2SB1568


z Features
1) Available in TO-220 FN package
2) Darling connection provides high
dc current gain (h
FE
)
3) Damper diode is incorporated
4) Built in resistors between base and
emitter
5) Two millimeters lower than TO-220 FP
which allows higher density mounting
6) Complementary pair with 2SD2399


zApplications
Power amplifler

zExternal dimensions (Unit : mm)
ROHM : TO-220FN
(1) Base (Gate)
(2) Collector (Drain)
(3) Emitter (Sourse)
4.5
2.8
0.75
φ3.2
(2)(3)(1)
0.8
2.54 2.62.54
1.3
1.2
14.0
12.0
8.0
5.0
10.0
15.0





zAbsolute maximum rating (Ta=25°C) zEquivalent circuit
C
B
E
B
C
E
: Base
: Collector
: Emitter
R1 R2
R1 3kΩ=:
=:R2 300Ω
Parameter Symbol
VCBO
VCEO
2
−6
PC
Tstg
Limits
−80
−80
−55 to +150
Unit
V
V
W(Ta=25°C)
W(Tc=25°C)
°C
°C
Collector-base voltage
Collector-emitter voltage
Collector dissipation
Storage temperature
Emitter-base voltage
Collector current
VEBO
IC
ICP
−7
−4
V
A(DC)
A(Pulse)
Tj 150Junction temperature
∗
30



zElectrical characteristics (unless otherwise noted, Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
−80
−80
−7
−
−
1000
−
−
−
−
−
−
−
5000
−1.0
35
12
−
−
−−
−100
−3
−3
10000
−1.5
−
V
V
V
V
µA
mV
−
MHz
IC = −50µA
IC = −1mA
IE = −5mA
VCB = −80V
VEB = −5V
VCE= −3V, IC = −2A
IC/IB= −2A/ −4mA
VCE= −5V, IE = 0.5A, f=10MHz
VCB= −10V, IE = 0A, f=1MHzCob
Collector−base
breakdown voltage
Collector−emitter
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector−emitter
saturation voltage
Collector−emitter
breakdown voltage
Transition frequency
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Output capacitance
∗
1
∗
1
∗
1
∗
2
pF