1
Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
For low-frequency output amplification
n
Features
l Possible to solder radiation fin directly to printed cicuit boad
l Type with universal characteristics
l Collector breakdown voltage: V
CBO
/V
CEO
= –50V
l Collector current: I
C
= –2A
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25 C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–50
–50
–5
–3
–2
10
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
*
h
FE1
Rank classification
Rank R S
h
FE1
120 to 240 170 to 340
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
I
C
= –10m A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –200mA
V
CE
= –2V, I
C
= –1A
I
C
= –1A, I
B
= –50mA
I
C
= –1A, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–50
–50
–5
120
60
typ
– 0.2
– 0.85
80
45
max
– 0.1
340
– 0.3
–1.2
60
Unit
m A
V
V
V
V
V
MHz
pF
Unit: mm
1:Base
2:Collector
3:Emitter
U Type Package
6.5– 0.1
5.3– 0.1
4.35– 0.1
4.6– 0.1
2.3– 0.1
0.75– 0.1
123
0.93– 0.1
2.5
–
0.1
0.8max
1.0
–
0.2
7.3
–
0.1
1.8
–
0.1
2.3– 0.1
0.5– 0.1
0.5– 0.1
0.1– 0.05
1.0– 0.1
6.5– 0.2
2.3
5.35
4.35
13.3
–
0.3
2.3
–
0.1
5.5
–
0.2
6.0
1.8
0.75
0.6
3
2.3
21
0.5– 0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
Unit: mm