2SB1565
Transistors
1/1
For Power Amplification (−60V, −3A)
2SB1565


zStructure zExternal dimensions (Unit : mm)
PNP Silicon Epitaxial Planar Transistor
TO-220FN
(1)Base
(2)Collector
(3)Emitter
4.5
2.8
0.75
φ3.2
(2)(3)(1)
0.8
2.54 2.62.54
1.3
1.2
14.0
12.0
8.0
5.0
10.0
15.0


zFeatures
1) Low VCE (sat).
2) Excellent electrical characteristics of DC current Gain hFE.
3) Wide SOA.





zApplications zComplements
Low frequency power amplifier
Stereophonic output
Stabilization of power supply
PNP
2SB1565
NPN
2SD2394

zAbsolute maximum ratings (Ta=25°C) zPackaging specifications and hFE





hFE values are classified as follows:





zElectrical characteristics (Ta=25°C)









Collector power dissipation P
2 W(Ta=25
Parameter
Collector-base voltage V − V
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
C
Symbol
CBO
VCEO
VEBO
IC
Tj
Tstg
Limits
60
−60
−7
−3
25
150
−55 to +150
Unit
V
V
A
ICP
DC
Pulse −6 A
°C)
W(Tc=25°C)
°C
°C
∗1
Package
Code −
Taping
Basic ordering unit (pieces)
2SB1565 EF
500
Type
hFE
100 to 200hFE
Item E F
160 to 320
∗1 Pw=100ms, non repetitive pulse
Parameter Conditions
Collector-base breakdown voltage IC=−50µA
Collector-emitter breakdown voltage IC=−1mA
Emitter-base breakdown voltage IE=−50µA
Collector cutoff current VCB=−60V
Emitter cutoff current VEB=−7V
Collector-emitter saturation voltage IC/IB=−2A/−0.2A
DC current gain VCE=−5V, IC=−0.5A
Transition frequency VCE=−5V, IE=0.5A, f=5MHz
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−60
−60
−7
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
15
50
Max.
−
−
−
−10
−10
−1.5
320
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF VCB=−10V, IE=0A, f=1MHz
∗1 Single pulse ∗2 hFE rank
∗1
∗1,2
∗1