1
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
n
Features
l High forward current transfer ratio h
FE
which has satisfactory linearity
l Allowing automatic insertion with radial taping
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
–60
–60
–20
–8
–4
–2
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –60V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
EB
= –15V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –4V, I
C
= – 0.8A
V
CE
= –4V, I
C
= –2A
I
C
= –2A, I
B
= –100mA
I
C
= –2A, I
B
= –100mA
V
CE
= –10V, I
C
= – 0.5A, f = 1MHz
I
C
= –2A,
I
B1
= –100mA, I
B2
= 100mA,
V
CC
= –50V
min
–60
80
30
typ
25
0.4
0.6
0.25
max
–10
–50
–10
400
–1.0
–1.5
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.010.0– 0.2
0.55– 0.1
2.5– 0.2 2.5– 0.2
4.2
–
0.2
13.0
–
0.2
2.5
–
0.2
18.0
–
0.5
Solder Dip
5.0– 0.1
2.25– 0.2
1.2– 0.1
0.65– 0.1
0.55– 0.1
C1.0
90°
C1.0
123
1.05– 0.10.35– 0.1
*
h
FE1
Rank classification
Rank Q P O
h
FE1
80 to 160 120 to 240 200 to 400