47
* hFE Rank O(5000to12000), P(6500to20000), Y(15000to30000)
Darlington 2SB1560
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical)
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
–2
–4
–6
–10
–8
–2 –4 –6
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–10mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
–1.2mA
–0.8mA
–0.6mA
IB=–0.4mA
0
–3
–2
–1
–0.2 –1–0.5 –10–5 –200–100–50
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
–7A
–10A
IC=–5A
0
–10
–8
–6
–2
–4
0 –2.5–2–1
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (Case Temp) 25˚C (Case Temp)
–30˚C (Case Temp)
1,000
10,000
40,000
5,000
–0.2 –0.5 –1 –5 –10
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–4V)
Typ
(VCE=–4V)
–0.2 –1–0.5 –5 –10
500
1000
5000
10000
50000
Collector Current IC(A)
DC Current Gain h
FE
125˚C
25˚C
–30˚C
0.1
1
3
0.5
1 5 10 50 100 500 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0.02 0.10.05 0.5 1 5 10
0
40
60
20
100
80
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
10ms
–10 –50–5–3 –100 –200
–0.05
–0.1
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
100ms
Without Heatsink
Natural Cooling
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
Safe Operating Area (Single Pulse)
θ j-a–t Characteristics
fT–IE Characteristics (Typical)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390)
Application : Audio, Series Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1560
–160
–150
–5
–10
–1
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fr
COB
2SB1560
–100max
–100max
–150min
5000min*
–2.5max
–3.0max
50typ
230typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=–160V
VEB=–5V
IC=–30mA
VCE=–4V, IC=–7A
IC=–7A, IB=–7mA
IC=–7A, IB=–7mA
VCE=–12V, IE=2A
VCB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
–70
RL
(Ω)
10
IC
(A)
–7
VBB2
(V)
5
IB2
(mA)
7
ton
(m s)
0.8typ
tstg
(m s)
3.0typ
tf
(m s)
1.2typ
IB1
(mA)
–7
VBB1
(V)
–10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
E
C
(70Ω)
Equivalent circuit