1
Power Transistors
2SB1553
Silicon PNP epitaxial planar type
For power amplification
n
Features
l High foward current transfer ratio h
FE
l Satisfactory linearity of foward current transfer ratio h
FE
l Allowing automatic insertion with radial taping
n
Absolute Maximum Ratings (T
C
=25˚C)
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
Conditions
V
CB
= –60V, I
E
= 0
V
CE
= –40V, I
B
= 0
V
EB
= –6V, I
C
= 0
I
C
= –25mA, I
B
= 0
V
CE
= –4V, I
C
= – 0.5A
I
C
= –2A, I
B
= – 0.05A
V
CE
= –12V, I
C
= – 0.2A, f = 10MHz
min
–60
300
typ
30
max
–100
–100
–100
700
–1
Unit
m A
m A
m A
V
V
MHz
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.010.0– 0.2
0.55– 0.1
2.5– 0.2 2.5– 0.2
4.2
–
0.2
13.0
–
0.2
2.5
–
0.2
18.0
–
0.5
Solder Dip
5.0– 0.1
2.25– 0.2
1.2– 0.1
0.65– 0.1
0.55– 0.1
C1.0
90°
C1.0
123
1.05– 0.10.35– 0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
–60
–60
–6
–6
–3
–1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
*
h
FE
Rank classification
Rank Q P
h
FE
300 to 500 400 to 700