1
Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
n
Features
l High forward current transfer ratio h
FE
which has satisfactory linearity
l Low collector to emitter saturation voltage V
CE(sat)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the rank classification.
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
1
9.9– 0.3
15.0
–
0.5
13.7
–
0.2
4.2
–
0.2
4.6– 0.2
2.9– 0.2
0.8– 0.1
1.4– 0.2
23
f 3.2– 0.1
2.6– 0.1
0.55– 0.15
2.54– 0.3
5.08– 0.5
3.0
–
0.5
1.6– 0.2
*
h
FE1
Rank classification
Rank Q P
h
FE1
70 to 150 120 to 250
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–5
–3
25
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SB1548
2SB1548A
2SB1548
2SB1548A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A
min
–60
–80
70
10
typ
30
0.5
1.2
0.3
max
–200
–200
–300
–300
–1
250
–1.8
–1.2
Unit
m A
m A
mA
V
V
V
MHz
m s
m s
m s
2SB1548
2SB1548A
2SB1548
2SB1548A
2SB1548
2SB1548A