2SB1488
器件描述：Silicon PNP triple diffusion planer type(For power switching)
器件厂商：PANASONIC [Panasonic Semiconductor]
文件大小：41.28KB，共2页
Sponsor by e络盟器件资料摘要：
1
Transistor
2SB1488
Silicon PNP triple diffusion planer type
For power switching
n
Features
l High foward current transfer ratio h
FE
.
l High-speed switching.
l High collector to base voltage V
CBO
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5– 0.1
4.5
–
0.1
14.5
–
0.5
2.5– 0.5 2.5– 0.5
2.5
–
0.1
6.9– 0.1
1.05
– 0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–400
–400
–7
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Collector current fall time
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
C
ob
Conditions
V
CB
= –400V, I
E
= 0
V
CE
= –100V, I
B
= 0
V
BE
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
V
CE
= –5V, I
C
= –50mA
V
CE
= –5V, I
C
= –300mA
*2
I
C
= –100mA, I
B
= –10mA
*2
I
C
= –100mA, I
B
= –10mA
*2
V
CB
= –10V, I
E
= 0.1A, f = 1MHz
*2
I
C
= –100mA, R
L
= 1.5kW
I
B1
= –10mA, I
B2
= 10mA
V
CC
= –150V
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–400
80
10
typ
– 0.25
– 0.8
25
0.4
5.5
0.5
20
max
–1
–1
–1
280
– 0.5
–1.2
1.0
6.5
1.0
40
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE1
Rank classification
Rank P Q
h
FE1
80 ~ 160 130 ~ 280
*2
Pulse measurement
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
Transistor
2SB1488
Silicon PNP triple diffusion planer type
For power switching
n
Features
l High foward current transfer ratio h
FE
.
l High-speed switching.
l High collector to base voltage V
CBO
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5– 0.1
4.5
–
0.1
14.5
–
0.5
2.5– 0.5 2.5– 0.5
2.5
–
0.1
6.9– 0.1
1.05
– 0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–400
–400
–7
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Collector current fall time
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
C
ob
Conditions
V
CB
= –400V, I
E
= 0
V
CE
= –100V, I
B
= 0
V
BE
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
V
CE
= –5V, I
C
= –50mA
V
CE
= –5V, I
C
= –300mA
*2
I
C
= –100mA, I
B
= –10mA
*2
I
C
= –100mA, I
B
= –10mA
*2
V
CB
= –10V, I
E
= 0.1A, f = 1MHz
*2
I
C
= –100mA, R
L
= 1.5kW
I
B1
= –10mA, I
B2
= 10mA
V
CC
= –150V
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–400
80
10
typ
– 0.25
– 0.8
25
0.4
5.5
0.5
20
max
–1
–1
–1
280
– 0.5
–1.2
1.0
6.5
1.0
40
Unit
m A
m A
m A
V
V
V
MHz
m s
m s
m s
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE1
Rank classification
Rank P Q
h
FE1
80 ~ 160 130 ~ 280
*2
Pulse measurement
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)