1
Transistor
2SB1463
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD2240
n
Features
l High collector to emitter voltage V
CEO
.
l Low noise voltage NV.
l SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter EIAJ:SC–75
3:Collector SS–Mini Type Package
1.6– 0.15
1.6
–
0.1
1.0
–
0.1
0.75
–
0.15
0.45
–
0.1
0.5
0.3
0 to 0.1
0.5
0.8– 0.1 0.40.4
0.2
+0.1 –0.05
0.15
+0.1 –0.05
1
2
3
0.2– 0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–150
–5
–100
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –100m A, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30mA, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100kW , Function = FLAT
min
–150
–5
130
typ
200
4
150
max
–1
450
–1
Unit
m A
V
V
V
MHz
pF
mV
*
h
FE
Rank classification
Rank R S T
h
FE
130 ~ 220 185 ~ 330 260 ~ 450
Marking Symbol IR IS IT
Marking symbol : I