2SB1474
Transistor
Power Transistor (−80V, −4A)
2SB1474
!Features
1) Darlington connection for a high hFE.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
-80
-80
-7
-4
1
10
150
-55~+150
Unit
V
V
V
A(DC)
-6
*
A
W
W (Tc=25˚C)
˚C
˚C
*
Single pulse, Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!External dimensions (Units : mm)
2.30.51.0 0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5.1
!Packaging specifications and hFE
Type 2SB1474
CPT3
1k~10k
TL
2500
Package
hFE
Code
Basic ordering unit (pieces)
!Circuit diagram
R1 3kΩ
R2 300Ω
B
C
E
C
B
E
: Base
: Collector
: Emitter
R1 R2
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
-80
-80
-
-
-
1000
-
-
-
-
-
-
-1
5000
12
45
-
-
-100
-3
-1.5
10000
-
-
V
V
µA
mA
V
*
1
*
1
*
2
-
MHz
pF
IC=-50µA
IC=-1mA
VCB=-80V
VEB=-5V
IC/IB=-2A/-4mA
VCE/IC=-3V/-2A
VCE=-5V, IE=0.5A, f=10MHz
VCB=-10V, IE=0A, f=1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
*
1 Measured using pulse current.
*
2 Transition frequency of the device.