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1998©
Document No. D16129EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SB1453 is a power transistor that can directly drive from
the IC output. This transistor is ideal for motor drivers and solenoid
drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High DC current amplifier ratio
hFE ≥ 100 (VCE = −5 V, IC = −0.5 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −60 V
Collector to emitter voltage VCEO −60 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −3.0 A
Collector current (pulse) IC(pulse)* −6.0 A
Base current (DC) IB(DC) −1.0 A
Total power dissipation PT (Tc = 25°C) 25 W
Total power dissipation PT (Ta = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter