1
Transistor
2SB1440
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2185
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–50
–50
–5
–3
–2
1
*
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –10m A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –200mA
V
CE
= –2V, I
C
= –1A
I
C
= –1A, I
B
= –50mA
I
C
= –1A, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–50
–50
–5
120
60
typ
– 0.2
– 0.85
80
45
max
340
– 0.3
–1.2
60
Unit
V
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*
h
FE1
Rank classification
Rank R S
h
FE1
120 ~ 240 170 ~ 340
Marking symbol : 1I