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1998©
Document No. D13660EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SB1430
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SB1430 is a Darlington power transistor that can directly
drive from the IC output. This transistor is ideal for motor drivers
and solenoid drivers in such as OA and FA equipment.
In addition, this transistor features a small resin-molded
insulation type package, thus contributing to high-density mounting
and mounting cost reduction.
FEATURES
• High hFE due to Darlington connection:
hFE ≥ 2,000 (VCE = 2 V, IC = 2 A)
Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −5.0 A
Collector current (pulse) IC(pulse)* −10 A
Base current (DC) IB(DC) −0.5 A
Total power dissipation PT (TC = 25°C) 20 W
Total power dissipation PT (TA = 25°C) 2.0 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT