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2SB1420

器件描述:Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)
器件厂商:SANKEN [Sanken electric]
文件大小:25.32KB,共1页
Sponsor by e络盟
器件资料摘要:
45
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
–3
–2
–1
–0.5 –1 –100–10
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
–4A
–8A
IC=–16A
–0.3 –1 –16–10–5
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–4V)
500
10000
5000
1000
20000
Typ
0.2
0.5
3
1
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
–10 –50–5–3 –100 –200
–0.03
–0.05
–1
–0.5
–0.1
–10
–50
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
100
µ
s
10ms
1ms
Without Heatsink
Natural Cooling
80
60
40
20
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
0
–10
–20
–26
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
–40mA
–12mA
–6mA
–3mA
IB=–1.5mA
–20mA
0
–16
–8
–12
–4
0 –2.4–2–1
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.3 –0.5 –1 –16–10–5
500
10000
5000
1000
20000
(VCE=–4V)
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
0.05 0.1 5 100.5 1 16
50
0
100
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
Silicon PNP Epitaxial Planar Transistor
Application : Chopper Regulator, DC Motor Driver and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1420
–120
–120
–6
–16(Pulse–26)
–1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1420
–10max
–10max
–120min
2000min
–1.5max
–2.5max
50typ
350typ
Unit
m A
mA
V
V
V
MHz
pF
Conditions
VCB=–120V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–8A
IC=–8A, IB=–16mA
IC=–8A, IB=–16mA
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
Darlington 2SB1420
(Ta=25°C) (Ta=25°C)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
External Dimensions MT-100(TO3P)
Weight : Approx 6.0g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
–24
RL
(Ω)
2
IC
(A)
–12
VBB2
(V)
5
IB2
(mA)
24
ton
(m s)
1.0typ
tstg
(m s)
3.0typ
tf
(m s)
1.0typ
IB1
(mA)
–24
VBB1
(V)
–10
B
C
E
(2kΩ) (80Ω)
Equivalent circuit