1
Transistor
2SB1378
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1996
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Optimum for low-voltage operation and for converters.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT1 Type Package
6.9– 0.1 1.05
– 0.05
2.5– 0.1
3.5
–
0.1
14.5
–
0.5
(1.45)
0.8
0.7 4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
–0.05
0.45
+0.1 –0.05
2.5– 0.5 2.5– 0.5
2.5
–
0.1
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –25V, I
E
= 0
V
CE
= –20V, I
B
= 0
I
C
= –10m A, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –0.5A
*2
V
CE
= –2V, I
C
= –1A
*2
I
C
= –500mA, I
B
= –50mA
*2
I
C
= –500mA, I
B
= –50mA
*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–25
–20
–7
90
25
typ
150
15
max
–100
–1
350
– 0.4
–1.2
25
Unit
nA
m A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
90 ~ 155 130 ~ 220 180 ~ 350
*2
Pulse measurement
1.2– 0.1
0.65
max.
0.45
0.1
0.05
+
–
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)