1
Power Transistors
2SB1393, 2SB1393A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD1985 and 2SD1985A
n
Features
l Satisfactory linearity of foward current transfer ratio h
FE
l Low collector to emitter saturation voltage V
CE(sat)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–80
–60
–80
–5
–5
–3
25
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
2SB1393
2SB1393A
2SB1393
2SB1393A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CEO
I
CES
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= –30V, I
B
= 0
V
CE
= –60V, I
B
= 0
V
CE
= –60V, V
BE
= 0
V
CE
= –80V, V
BE
= 0
V
EB
= –5V, I
C
= 0
I
C
= –30mA, I
B
= 0
V
CE
= –4V, I
C
= –1A
V
CE
= –4V, I
C
= –3A
V
CE
= –4V, I
C
= –3A
I
C
= –3A, I
B
= – 0.375A
V
CE
= –5V, I
C
= – 0.1A, f = 1MHz
I
C
= –1A, I
B1
= – 0.1A, I
B2
= 0.1A,
V
CC
= –50V
min
–60
–80
70
10
typ
20
0.5
1.2
0.3
max
–300
–300
–200
–200
–1
250
–1.8
–1.2
Unit
m A
m A
mA
V
V
V
MHz
m s
m s
m s
2SB1393
2SB1393A
2SB1393
2SB1393A
2SB1393
2SB1393A
*
h
FE1
Rank classification
Rank Q P
h
FE1
70 to 150 120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1