2SB1392
器件描述：Silicon PNP Triple Diffused
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：32.95KB，共5页
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2SB1392
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
1. Base
2. Collector
3. Emitter
TO-220FM
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–70 V
Collector to emitter voltage V
CEO
–60 V
Emitter to base voltage V
EBO
–5 V
Collector current I
C
–4 A
Collector peak current I
C(peak)
–8 A
Collector power dissipation P
C
2W
C
*
1
25
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.
Silicon PNP Triple Diffused
Application
Low frequency power amplifier
Outline
1. Base
2. Collector
3. Emitter
TO-220FM
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–70 V
Collector to emitter voltage V
CEO
–60 V
Emitter to base voltage V
EBO
–5 V
Collector current I
C
–4 A
Collector peak current I
C(peak)
–8 A
Collector power dissipation P
C
2W
C
*
1
25
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.