42
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
–5
–10
–20
–15
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
I
B
=–10mA
–6mA
–3mA
–4mA
–2mA
–1mA
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
–3
–2
–1
–0.1 –1 –100–10
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
–1A
–5A
IC=–10A
–0.3 –1 –20–10–5
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–4V)
800
10000
5000
1000
20000
Typ
–10 –50–5–2 –100
–0.05
–1
–0.5
–0.1
–10
–30
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
10ms
1ms
Without Heatsink
Natural Cooling
60
40
20
3.5
0
0 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
–20
–10
–15
–5
0 –2.4–2–1
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.3 –0.5 –1 –5 –20–10
500
5000
1000
20000
10000
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
0.05 0.1 5 100.5 1 20
120
80
0
40
200
240
160
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
0.3
0.5
5
1
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1352
–60
–60
–6
–12(Pulse–20)
–1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1352
–10max
–10max
–60min
2000min
–1.5max
–2.0max
130typ
170typ
Unit
m A
mA
V
V
V
MHz
pF
Conditions
VCB=–60V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–10A
IC=–10A, IB=–20mA
IC=–10A, IB=–20mA
VCE=–12V, IE=1A
VCB=–10V, f=1MHz
Darlington 2SB1352
(Ta=25°C) (Ta=25°C)
External Dimensions FM100(TO3PF)
Silicon PNP Epitaxial Planar Transistor
Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose
Weight : Approx 6.5g
a. Type No.
b. Lot No.
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
–40
RL
(Ω)
4
IC
(A)
–10
VBB2
(V)
5
IB2
(mA)
20
ton
(m s)
0.7typ
tstg
(m s)
1.5typ
tf
(m s)
0.6typ
IB1
(mA)
–20
VBB1
(V)
–10
B
C
E
(2kΩ)(100Ω)
Equivalent circuit