1
Power Transistors
2SB1361
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD2052
n
Features
l Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
l Wide area of safe operation (ASO)
l High transition frequency f
T
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–150
–5
–15
–9
100
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –150V, I
E
= 0
V
EB
= –3V, I
C
= 0
V
CE
= –5V, I
C
= –20mA
V
CE
= –5V, I
C
= –1A
V
CE
= –5V, I
C
= –7A
V
CE
= –5V, I
C
= –7A
I
C
= –7A, I
B
= – 0.7A
V
CE
= –5V, I
C
= – 0.5A, f = 1MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
20
60
20
typ
15
270
max
–50
–50
200
–1.8
–2.0
Unit
m A
m A
V
V
MHz
pF
T
C
=25 C
Ta=25 C
*
h
FE2
Rank classification
Rank Q S P
h
FE2
60 to 120 80 to 160 100 to 200
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0– 0.3
21.0
–
0.5
16.2
–
0.5
12.5
Solder Dip
3.5
0
.7
15.0
–
0.2
5.0– 0.2
11.0– 0.2
10.9– 0.5
5.45– 0.3
321
1.1– 0.1
2.0– 0.2
0.6– 0.2
2.0– 0.1
f 3.2– 0.1
3.2