Transistors
1
2SB1322A
Silicon PNP epitaxial planer type
For low-frequency power amplification
Complementary to 2SD1994A
a73 Features
• Allowing supply with the radial taping
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
−60 V
Collector to emitter voltage V
CEO
−50 V
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−1.5 A
Collector current I
C
−1A
Collector power dissipation
*
P
C
1W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector to base voltage V
CBO
I
C
= −10 µA, I
E
= 0 −60 V
Collector to emitter voltage V
CEO
I
C
= −2 mA, I
B
= 0 −50 V
Emitter to base voltage V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= −10 V, I
C
= −500 mA 85 340
h
FE2
V
CE
= −5 V, I
C
= −1 A 50
Collector to emitter saturation voltage
*
1
V
CE(sat)
I
C
= −500 mA, I
B
= −50 mA − 0.4 V
Base to emitter saturation voltage
*
1
V
BE(sat)
I
C
= −500 mA, I
B
= −50 mA −1.2 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 20 30 pF
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
2.5±0.1
4.5
±
0.1
14.5
±
0.5
2.5±0.5 2.5±0.5
2.5
±
0.1
6.9±0.1
1.05
±0.05 (1.45)
4.00.7 0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
−0.05
0.45
+
0.1
−
0.05
321
1.2±0.1
0.65
max.
0.45
0.1
0.05
+
−
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Note)
*
1: Pulse measurement
*
2: Rank classification
Product of no-rank is not classified and have no indication for rank.
Note)
*
: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion