2SB1580 / 2SB1316
Transistors
Rev.A 1/2
Power Transistor (−100V , −2A)
2SB1580 / 2SB1316



zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.


zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−100
−8
−2
2
1
150
−55 to +150
Unit
V
V
V
A(DC)
−3 ∗1A(Pulse)
W
10
∗2
W(Tc=25°C)
2SB1580
2SB1316
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
°C
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.



zPackaging specifications and hFE
Type 2SB1580
MPT3
1k to 10k
T100
1000
BN∗
2SB1316
CPT3
1k to 10k
TL
2500
−
Denotes hFE
Package
hFE
Code
Basic ordering unit (pieces)
Marking
∗



zEquivalent circuit
R1 3.5kΩ
R2 300Ω
B
C
E
C
B
E
: Base
: Collector
: Emitter
R1 R2


zExternal dimensions (Unit : mm)
2SB1316
2SB1580
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
1.5
0.4
1.5 0.4
1.60.53.0
0.41.5
(3)
4.5
(1)
(2)
0.5
4.0
2.51.0
ROHM : MPT3
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.50.65
0.9
(
1
)
0.75
2.3
0.9
1.55.5
5.1



zElectrical characteristics (Ta = 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BVCBO
BVCEO
ICBO
IEBO
Cob
−100
−100
−
−
−
−
−
−
−
35
−
−
−10
−3
−
V
V
µA
mA
pF
MHz
IC = −50µA
IC = −5mA
VCB = −100V
VEB = −7V
VCE(sat) −−−1.5 V IC/IB= −1A/−1mA
hFE 1000 − 10000 − ∗VCE = −2V , IC = −1A
VCB = −10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVEBO −10 −−V IE = −5mAEmitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Output capacitance
Collector-emitter saturation voltage
DC current transfer ratio
fT 50 VCE = −5V , IE =0.1A , f = 30MHzTransition frequency
∗
∗Measured using pulse current.