1
Transistor
2SB1288
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Large collector current I
C
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0– 0.2
13.5
–
0.5
0.7
–
0.2
8.0
–
0.2
1.27
123
1.27
4.0– 0.2
0.45
+0.15
–0.10.45
+0.15
–0.1
2.3
–
0.2
0.7– 0.1
2.54– 0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–7
–10
–5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –10V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10m A, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
min
–20
–7
90
typ
120
max
–100
–100
625
–1
85
Unit
nA
nA
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank P Q R
h
FE
90 ~ 135 120 ~ 205 180 ~ 625
*2
Pulse measurement