2SB1285
器件描述:Darlington Transistor(-15A PNP)
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器件资料摘要:
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : MTO-3P
Darlington Transistor
-15A PNP
2SB1285
(T15J10)
●Absolute Maximum Ratings
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55~ +150 ℃
Junction Temperature Tj +150 ℃
Collector to Base Voltage V
CBO
-100 V
Collector to Emitter Voltage V
CEO
-100 V
Emitter to Base Voltage V
EBO
-7 V
Collector Current DC I
C
-15A
Collector Current Peak I
CP
-22 A
Base Current DC I
B
-1 A
Base Current Peak I
BP
-2 A
Total Transistor Dissipation P
T
Tc = 25℃ 100 W
Mounting Torque TOR (Recommended torque : 0.5N・m) 0.8 N・m
●Electrical Characteristics (Tc=25℃)
Item Symbol Conditions Ratings Unit
Collector Cutoff Current I
CBO
V
CB
= -100V Max -0.1 mA
I
CEO
V
CE
= -100V Max -0.1
Emitter Cutoff Current I
EBO
V
EB
= -7V Max -5 mA
DC Current Gain h
FE
V
CE
= -3V, I
C
= -10A Min 1,500
Max 15,000
Collector to Emitter Saturation Voltage V
CE
(sat) I
C
= -10A Max -1.5 V
Base to Emitter Saturation Voltage V
BE
(sat) I
B
= -20mA Max -2.0 V
Thermal Resistance θ jc Junction to case Max 1.25 ℃ /W
Transition Frequency f
T
V
CE
= 10V, I
C
= -1.5A TYP 20 MHz
Turn on Time ton Max 1
I
C
= -15A
Storage Time ts I
B1
= I
B2
= -20mA Max 4 μ s
R
L
= 2Ω
Fall Time tf V
BB2
= -4V Max 2