38
Darlington 2SB1257
4.41.5 1.5
BEC
5.45±0.1
ø3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2 5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SB1257
–60
–60
–6
–4(Pulse–6)
–1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SB1257
–10max
–10max
–60min
2000min
–1.5max
–2max
150typ
75typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=–60V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–3A
IC=–3A, IB=–6mA
IC=–3A, IB=–6mA
VCE=–12V, IE=0.2A
VCB=–10V, f=1MHz
(Ta=25°C) (Ta=25°C)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
–30
RL
(Ω)
10
IC
(A)
–3
VBB2
(V)
5
IB2
(mA)
10
ton
(m s)
0.4typ
tstg
(m s)
0.8typ
tf
(m s)
0.6typ
IB1
(mA)
–10
VBB1
(V)
–10
External Dimensions FM20(TO220F)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)
Application : Driver for Solenoid, Relay and Motor and General Purpose
Weight : Approx 2.0g
a. Type No.
b. Lot No.
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
0
–2
–1
–4
–3
–6
–5
–2 –6–4–1 –5–3
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
I
B
=–2.3mA
–1.8mA
–1.5mA
–1.2mA
–0.8mA
–1.0mA
–0.02 –0.1 –1–0.5 –6–5
Collector Current IC(A)
DC Current Gain h
FE
(VCE=–2V)
100
500
20
50
1000
8000
5000
Typ
0.7
5
1
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0.05 0.1 0.5 1 4
120
80
0
40
200
240
160
Cut-off Frequency f
T
(MH
Z
)
(VCE=–12V)
Emitter Current IE(A)
Typ
–10–5–3 –70
–0.07
–1
–0.5
–0.1
–10
–5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
DC
10ms
1ms
Without Heatsink
Natural Cooling
–0.6
–3
–2
–1
–0.2 –1–0.5 –10–5 –50
Base Current IB(mA)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
–2A
–3A
IC=–1A
0
–4
–2
–3
–1
0 –2.2–2–1
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=–2V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–2V)
–0.02 –0.1–0.05 –0.5 –6–5–1
20
100
50
5000
500
1000
8000
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
25
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
150x150x2
50x50x2
100x10
0
x
2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
B
C
E
(2kΩ)(650Ω)
Equivalent circuit