1
Transistor
2SC3941
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
For small TV video output
Complementary to 2SB1221
n
Features
l High collector to emitter voltage V
CEO
.
l High transition frequency f
T
.
l Allowing supply with the radial taping.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO–92NL Package
5.0– 0.2
13.5
–
0.5
0.7
–
0.2
8.0
–
0.2
1.27
123
1.27
4.0– 0.2
0.45
+0.15
–0.10.45
+0.15
–0.1
2.3
–
0.2
0.7– 0.1
2.54– 0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
300
300
7
100
70
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 100m A, I
B
= 0
I
E
= 1m A, I
C
= 0
V
CB
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
300
7
30
50
typ
80
4
max
2
220
1.2
8
Unit
m A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank P Q R
h
FE
30 ~ 100 60 ~ 150 100 ~ 220