Transistors
1
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= −20 V, I
E
= 0 − 0.1 µA
Collector to
2SB1219 V
CBO
I
C
= −10 µA, I
E
= 0 −30 V
base voltage
2SB1219A −60
Collector to
2SB1219 V
CEO
I
C
= −2 mA, I
B
= 0 −25 V
emitter voltage
2SB1219A −50
Emitter to base voltage V
EBO
I
E
= −10 µA, I
C
= 0 −5V
Forward current transfer ratio
*
1
h
FE1

*
2
V
CE
= −10 V, I
C
= −150 mA 85 340
h
FE2
V
CE
= −10 V, I
C
= −500 mA 40
Collector to emitter saturation voltage
*
1
V
CE(sat)
I
C
= −300 mA, I
B
= −30 mA − 0.35 − 0.6 V
Base to emitter saturation voltage
*
1
V
BE(sat)
I
C
= −300 mA, I
B
= −30 mA −1.1 −1.5 V
Transition frequency f
T
V
CB
= −10 V, I
E
= 50 mA, f = 200 MHz 200 MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz 6 15 pF
Rank Q R S No-rank
h
FE1
85 to 170 120 to 240 170 to 340 85 to 340
Marking 2SB1219 CQ CR CS C
symbol 2SB1219A DQ DR DS D
2SB1219, 2SB1219A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1820 and 2SD1820A
a73 Features
• Large collector current I
C
• S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
a73 Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Collector to
2SB1219 V
CBO
−30 V
base voltage
2SB1219A −60
Collector to
2SB1219 V
CEO
−25 V
emitter voltage
2SB1219A −50
Emitter to base voltage V
EBO
−5V
Peak collector current I
CP
−1A
Collector current I
C
−500 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
1: Pulse measurement
*
2: Rank classification
Marking Symbol
• 2SB1219 : C
• 2SB1219A: D
2.1
±0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±0.1
0.9
±0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
°
10°
1: Base
2: Emitter EIAJ: SC-70
3: Collector S-Mini Type Package
Product of no-rank is not classi-
fied and have no indication for
rank.