1
Transistor
2SB1209
Silicon PNP triple diffusion planer type
For low-frequency amplification
n
Features
l High collector to base voltage V
CBO
.
l High collector to emitter voltage V
CEO
.
l Low collector to emitter saturation voltage V
CE(sat)
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
–400
–400
–5
–200
–100
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –100m A, I
E
= 0
I
C
= –500m A, I
B
= 0
I
E
= –100m A, I
C
= 0
V
CE
= –5V, I
C
= –30mA
I
C
= –10mA, I
B
= –1mA
I
C
= –50mA, I
B
= –5mA
V
CB
= –30V, I
E
= 20mA, f = 200MHz
V
CB
= –30V, I
E
= 0, f = 1MHz
min
–400
–400
–5
40
typ
50
max
– 0.6
–1.5
9
Unit
V
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion