2SB1188 / 2SB1182 / 2SB1240
Transistors
Rev.A 1/3
Medium power transistor (−32V, −2A)
2SB1188 / 2SB1182 / 2SB1240


zFeatures
1) Low VCE(sat).
VCE(sat) = −0.5V (Typ.)
(IC/IB = −2A / −0.2A)
2) Complements the 2SD1766 / 2SD1758 /
2SD1862.



zStructure
Epitaxial planar type
PNP silicon transistor














zExternal dimensions (Unit : mm)
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SB1188
2SB1240
2SB1182
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
1.0
6.8±0.2
2.5±0.2
1.05 0.45±0.1
2.54 2.54
0.5±0.1
0.9 4.4
±
0.2
14.5
±
0.5
(1) (2) (3)
0.65Max.
−
0.1
+
0.2
−0.05
+0.1
−0.1
+0.2
+0.2
−0.1
(3)(2)(1)
1.0
±
0.2
0.5
±
0.1
4.0
±
0.3
2.5
3.0±0.2
1.5±0.11.5±0.1
0.4±0.1 0.5±0.1 0.4±0.1
0.4
1.5
4.5
1.6±0.1
−0.1
+0.2
−0.1
+0.2
+
0.3
−
0.1
2.3±0.22.3±0.2
0.65±0.1
0.9
0.75
1.0±0.2
0.55±0.1
9.5
±
0.5
5.5
1.5
±
0.3
2.5
1.5
2.3
0.5±0.1
6.5±0.2
5.1
C0.5
(3)(2)(1)
0.9
Abbreviated symbol: BC∗
∗ Denotes hFE

zAbsolute maximum ratings (Ta=25°C)
∗
1 Single pulse, Pw=100ms
∗
2 When mounted on a 40×40×0.7 mm ceramic board.
∗
3 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
−40 V
V
V
A(DC)
W
W
W (Tc=25°C)
W
°C
°C
−32
−5
−2
IC
A (Pulse)−3
0.5
2
10
1
∗
2
∗
1
∗
3
2SB1188
2SB1182
2SB1240
150
−55 to 150
Symbol Limits Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature