1
Power Transistors
2SB1154
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1705
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
l Satisfactory linearity of foward current transfer ratio h
FE
l Large collector current I
C
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Ratings
–130
–80
–7
–20
–10
70
3
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
*
h
FE3
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
t
on
t
stg
t
f
Conditions
V
CB
= –100V, I
E
= 0
V
EB
= –5V, I
C
= 0
I
C
= –10mA, I
B
= 0
V
CE
= –2V, I
C
= – 0.1A
V
CE
= –2V, I
C
= –3A
V
CE
= –2V, I
C
= –6A
I
C
= –6A, I
B
= – 0.3A
I
C
= –10A, I
B
= –1A
I
C
= –6A, I
B
= – 0.3A
I
C
= –10A, I
B
= –1A
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
I
C
= –6A, I
B1
= – 0.6A, I
B2
= 0.6A,
V
CC
= –50V
min
–80
45
90
30
typ
30
0.5
1.0
0.2
max
–10
–50
260
– 0.5
–1.5
–1.5
–2.5
Unit
m A
m A
V
V
V
V
V
MHz
m s
m s
m s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0– 0.3
21.0
–
0.5
16.2
–
0.5
12.5
Solder Dip
3.5
0
.7
15.0
–
0.2
5.0– 0.2
11.0– 0.2
10.9– 0.5
5.45– 0.3
321
1.1– 0.1
2.0– 0.2
0.6– 0.2
2.0– 0.1
f 3.2– 0.1
3.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
h
FE2
Rank classification
Rank Q P
h
FE2
90 to 180 130 to 260